Shanghai Prisemi Elec PDTC144EE

Shanghai Prisemi Elec · Transistors (BJTs) · MPN PDTC144EE

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO-
DC Current Gain68
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor47kΩ
typeNPN
Number1 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 100mA 150mW Surface Mount SOT-523

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