Shanghai Prisemi Elec PDTC123JE

Shanghai Prisemi Elec · Transistors (BJTs) · MPN PDTC123JE

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor2.86kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio26
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 100mA 150mW Surface Mount SOT-523

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