SAMSUNG · Memory ICs · MPN KLMDG4UCTB-B041
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| Memory Size | 128GB |
|---|---|
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 320MB/S |
| Writing Speed in Sequence | 200MB/S |
| configuration | - |
| NAND Stand-By Current | - |
| Controller Stand-By Current | - |
| Interface | eMMC 5.1 |
| NAND Operating Voltage (VCCF) | 1.8V;3.3V |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V |
128GB eMMC 5.1 FBGA-153(13x11.5) Memory (ICs) RoHS