SAMSUNG KLMBG4GESD-B03Q

SAMSUNG · Memory ICs · MPN KLMBG4GESD-B03Q

No reviews yet — be the first to review SAMSUNG KLMBG4GESD-B03Q.

Specifications

Memory Size	32GB
Operating temperature	-40℃~+105℃
NAND Operating Voltage (VCCF)	1.8V;3.3V

Technical details

32GB Memory (ICs) RoHS

Related Memory ICs

• HXY MOSFET AT24C02
• MICROCHIP AT24C256-10PC
• Tudi CAT25M01VI-GT3-TUDI
• Alliance Memory AS6C4008-55STIN
• Infineon/CYPRESS CY7C0851AV-133AI
• Infineon/CYPRESS CY7C1321KV18-250BZXCT
• Infineon/CYPRESS CY7C1470BV33-167AXC
• micron MT29F16T08GWLCEM5-QB:C TR
• micron MT62F2G32D4DS-023 AIT:B
• micron MT29F2G08ABAEAH4-ITE:E TR