SAMSUNG · Memory ICs · MPN KLM4G1FETE-B041
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| Memory Size | 4GB |
|---|---|
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 300MB/S |
| Writing Speed in Sequence | 19MB/S |
| configuration | SLC |
| NAND Operating Voltage (VCCF) | 2.7V~3.6V |
| Interface | eMMC 5.1 |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V;2.7V~3.6V |
4GB SLC eMMC 5.1 FBGA-153(10x11) Memory (ICs) RoHS