SAMSUNG K4B4G1646E-BCNB

SAMSUNG · Memory ICs · MPN K4B4G1646E-BCNB

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Specifications

Refresh Current2mA
Memory Size4Gbit
Voltage - Supply1.425V~1.575V
Operating temperature0℃~+95℃
Clock Frequency1.066GHz
FeaturesAuto precharge function;Asynchronous reset function;Dynamic on-chip termination;ZQ calibration function;Data mask funct…
Memory FormatDDR3 SDRAM
Current - Supply120mA

Technical details

4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS

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