ROHM VT6T12T2R

ROHM · Transistors (BJTs) · MPN VT6T12T2R

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO50V
DC Current Gain120
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))400mV
typePNP
Current - Collector(Ic)100mA
Operating Temperature-

Technical details

150mW 50V 120 PNP 100mA VMT6 Bipolar Transistor Arrays RoHS

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