ROHM UMH4NTN

ROHM · Transistors (BJTs) · MPN UMH4NTN

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
typeNPN
Input Resistor10kΩ
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

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