ROHM UMG9NTR

ROHM · Transistors (BJTs) · MPN UMG9NTR

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Specifications

Transition frequency(fT)250MHz
DC Current Gain30
typeNPN
Output Voltage(VO(on))300mV
Input Resistor13kΩ
Resistor Ratio1.2
Number2 NPN Pre-Biased (Emitter-Coupled)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)500mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5

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