ROHM UMD6NFHATR

ROHM · Transistors (BJTs) · MPN UMD6NFHATR

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
typeNPN+PNP
Input Resistor4.7kΩ
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation150mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

100 1 NPN, 1 PNP Pre-Biased 150mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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