ROHM UMB4NTN

ROHM · Transistors (BJTs) · MPN UMB4NTN

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
typePNP
Input Resistor6.11kΩ
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation150mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

100 2 PNP Pre-Biased Transistors 150mW 100mA 50V TSSOP-6(SC-88)SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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