ROHM UMB10NTN

ROHM · Transistors (BJTs) · MPN UMB10NTN

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
typePNP
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor2.2kΩ
Resistor Ratio21
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,0.3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-40℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363(UMT6)

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