ROHM QSZ2TR

ROHM · Transistors (BJTs) · MPN QSZ2TR

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Specifications

Current - Collector Cutoff100nA
DC Current Gain270
Pd - Power Dissipation1.25W
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
typeNPN+PNP
Vce Saturation(VCE(sat))370mV
Number1 NPN + 1 PNP
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 30V 1.5A 300MHz 1.25W Surface Mount TSMT5

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