ROHM QS5Y2FSTR

ROHM · Transistors (BJTs) · MPN QS5Y2FSTR

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Specifications

Current - Collector Cutoff1uA
DC Current Gain180
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation500mW
Transition frequency(fT)320MHz;300MHz
typeNPN+PNP
Vce Saturation(VCE(sat))350mV
Current - Collector(Ic)3A
Operating Temperature-

Technical details

180 50V 500mW NPN+PNP 3A TSMT-5 Bipolar Transistor Arrays RoHS

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