ROHM QS5Y1TR

ROHM · Transistors (BJTs) · MPN QS5Y1TR

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Specifications

Current - Collector Cutoff1uA
DC Current Gain200
Pd - Power Dissipation1.25W
Collector - Emitter Voltage VCEO30V
Transition frequency(fT)300MHz;270MHz
typeNPN+PNP
Vce Saturation(VCE(sat))400mV
Current - Collector(Ic)3A
Operating Temperature-

Technical details

200 1.25W 30V NPN+PNP 3A TSMT5 Bipolar Transistor Arrays RoHS

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