ROHM QS5W2TR

ROHM · Transistors (BJTs) · MPN QS5W2TR

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Specifications

Current - Collector Cutoff1uA
DC Current Gain180
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation1.25W
Emitter-Base Voltage VEBO6V
Transition frequency(fT)320MHz
typeNPN
Vce Saturation(VCE(sat))350mV
Number2 NPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 3A 320MHz 1.25W Surface Mount TSMT5

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