ROHM LSCR523EBFS8TL

ROHM · Transistors (BJTs) · MPN LSCR523EBFS8TL

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)350MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 50V 100mA 350MHz 150mW Surface Mount SC-89

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