ROHM IMX8T108

ROHM · Transistors (BJTs) · MPN IMX8T108

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Specifications

Current - Collector Cutoff500nA
DC Current Gain180
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)140MHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number2 NPN
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 120V 50mA 140MHz 300mW Surface Mount SOT-457

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