ROHM IMX1T110

ROHM · Transistors (BJTs) · MPN IMX1T110

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain120
Pd - Power Dissipation300mW
Number2 NPN
typeNPN
Current - Collector(Ic)150mA
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 300mW Surface Mount SOT-457

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