ROHM IMH24T110

ROHM · Transistors (BJTs) · MPN IMH24T110

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)150MHz
Emitter-Base Voltage VEBO12V
DC Current Gain820
Vce Saturation(VCE(sat))150mV
typeNPN
Input Resistor2.86kΩ
Number2 NPN (Pre-Biased)
Pd - Power Dissipation300mW
Current - Collector(Ic)600mA
Collector - Emitter Voltage VCEO20V

Technical details

820 2 NPN (Pre-Biased) 300mW 600mA 20V SC-74(SOT-457) Bipolar Transistor Arrays, Pre-Biased RoHS

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