ROHM IMD9AT108

ROHM · Transistors (BJTs) · MPN IMD9AT108

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Specifications

Transition frequency(fT)250MHz
DC Current Gain68
typeNPN+PNP
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio4.7
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.4V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,300mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457

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