ROHM IMD6AT108

ROHM · Transistors (BJTs) · MPN IMD6AT108

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Resistor Ratio-
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)-
Current - Collector(Ic)100mA

Technical details

100 300mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS

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