ROHM IMD2AT108

ROHM · Transistors (BJTs) · MPN IMD2AT108

No reviews yet — be the first to review ROHM IMD2AT108.

Specifications

Transition frequency(fT)250MHz
DC Current Gain56
typeNPN+PNP
Output Voltage(VO(on))100mV
Input Resistor22kΩ
Resistor Ratio1
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)3V@5mA,200mV
Voltage - Input(Max)(VI(off))3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457

Related Transistors (BJTs)