ROHM IMD16AT108

ROHM · Transistors (BJTs) · MPN IMD16AT108

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))-
Input Resistor2.86kΩ
Resistor Ratio12
Pd - Power Dissipation300mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN+PNP

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SC-74

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