ROHM IMD10AT108

ROHM · Transistors (BJTs) · MPN IMD10AT108

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Specifications

Current - Collector Cutoff0.5uA
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))300mV
Input Resistor13kΩ
Resistor Ratio120
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)1.5V
Current - Collector(Ic)500mA
Collector - Emitter Voltage VCEO50V
typeNPN+PNP

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 300mW Surface Mount SOT-457

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