ROHM IMB7AT108

ROHM · Transistors (BJTs) · MPN IMB7AT108

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Specifications

Current - Collector Cutoff0.5uA
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
typePNP
Input Resistor6.11kΩ
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation300mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

100 2 PNP Pre-Biased Transistors 300mW 100mA 50V SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS

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