ROHM IMB11AT110

ROHM · Transistors (BJTs) · MPN IMB11AT110

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Specifications

Transition frequency(fT)250MHz
DC Current Gain30
typePNP
Output Voltage(VO(on))300mV@10mA,500uA
Input Resistor13kΩ
Resistor Ratio1
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

30 2 PNP Pre-Biased Transistors 300mW 100mA 50V SC-74(SOT-457) Bipolar Transistor Arrays, Pre-Biased RoHS

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