ROHM EMZ8T2R

ROHM · Transistors (BJTs) · MPN EMZ8T2R

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO50V;12V
DC Current Gain120
Transition frequency(fT)180MHz;260MHz
Vce Saturation(VCE(sat))400mV
typeNPN+PNP
Current - Collector(Ic)150mA;500mA
Operating Temperature-

Technical details

150mW 120 NPN+PNP SOT-563(SOT-666) Bipolar Transistor Arrays RoHS

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