ROHM EMZ51T2R

ROHM · Transistors (BJTs) · MPN EMZ51T2R

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO20V
DC Current Gain120
Emitter-Base Voltage VEBO5V
Transition frequency(fT)400MHz
Vce Saturation(VCE(sat))300mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Operating Temperature-

Technical details

150mW 20V 120 NPN+PNP 200mA SOT-563(SOT-666) Bipolar Transistor Arrays RoHS

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