ROHM EMX52T2R

ROHM · Transistors (BJTs) · MPN EMX52T2R

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO50V
DC Current Gain120
Transition frequency(fT)350MHz
typeNPN
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-

Technical details

150mW 50V 120 NPN 100mA SOT-563(SOT-666) Bipolar Transistor Arrays RoHS

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