ROHM EMX51T2R

ROHM · Transistors (BJTs) · MPN EMX51T2R

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation150mW
DC Current Gain120
Collector - Emitter Voltage VCEO20V
Transition frequency(fT)400MHz
Vce Saturation(VCE(sat))300mV
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-

Technical details

150mW 120 20V NPN 200mA SOT-563(SOT-666) Bipolar Transistor Arrays RoHS

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