ROHM EMX4T2R

ROHM · Transistors (BJTs) · MPN EMX4T2R

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Specifications

Current - Collector Cutoff500nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO20V
DC Current Gain56
Transition frequency(fT)1.5GHz
Vce Saturation(VCE(sat))500mV
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-

Technical details

150mW 20V 56 NPN 50mA SOT-563(SOT-666) Bipolar Transistor Arrays RoHS

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