ROHM EMX1T2R

ROHM · Transistors (BJTs) · MPN EMX1T2R

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)180MHz
Vce Saturation(VCE(sat))400mV
typeNPN
Number2 NPN
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 300mW Surface Mount SOT-563

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