ROHM EMH3FHAT2R

ROHM · Transistors (BJTs) · MPN EMH3FHAT2R

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
typeNPN
Input Resistor6.11kΩ
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

100 2 NPN (Pre-Biased) 150mW 100mA 50V SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS

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