ROHM EMH11T2R

ROHM · Transistors (BJTs) · MPN EMH11T2R

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Specifications

Transition frequency(fT)250MHz
DC Current Gain30
typeNPN
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor13kΩ
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@10mA,0.3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563

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