ROHM · Transistors (BJTs) · MPN EMG5T2R
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| Transition frequency(fT) | 250MHz |
|---|---|
| DC Current Gain | 68 |
| type | NPN |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 13kΩ |
| Resistor Ratio | 4.7 |
| Number | 2 NPN Pre-Biased (Emitter-Coupled) |
| Pd - Power Dissipation | 150mW |
| Voltage - Input(Max)(VI(off)) | 300mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-553