ROHM · Transistors (BJTs) · MPN EMG3T2R
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| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 300mV |
| type | NPN |
| Input Resistor | 4.7kΩ |
| Number | 2 NPN Pre-Biased (Emitter-Coupled) |
| Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-553-5