ROHM · Transistors (BJTs) · MPN EMF8T2R
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 320MHz |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 68 |
| Vce Saturation(VCE(sat)) | 250mV |
| Output Voltage(VO(on)) | 300mV@10mA,500uA |
| Input Resistor | 61.1kΩ |
| Resistor Ratio | 1.2 |
| Pd - Power Dissipation | 150mW |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 3V@2mA,300mV |
| Current - Collector(Ic) | 500mA |
68 150mW 500mA 12V 1 NPN Pre-Biased, 1 NPN SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS