ROHM EMF24T2R

ROHM · Transistors (BJTs) · MPN EMF24T2R

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Specifications

Current - Collector Cutoff0.1uA
Transition frequency(fT)180MHz
Emitter-Base Voltage VEBO7V
DC Current Gain30
Vce Saturation(VCE(sat))400mV
Output Voltage(VO(on))300mV@10mA,500uA
Input Resistor13kΩ
Resistor Ratio1.2
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV
Current - Collector(Ic)150mA

Technical details

30 150mW 150mA 50V 1 NPN Pre-Biased, 1 NPN SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS

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