ROHM EMD62T2R

ROHM · Transistors (BJTs) · MPN EMD62T2R

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Specifications

DC Current Gain80
Output Voltage(VO(on))150mV
Input Resistor47kΩ
Resistor Ratio1
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 150mW Surface Mount SOT-563(SOT-666)

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