ROHM · Transistors (BJTs) · MPN EMD5T2R
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| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | 250MHz |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 68 |
| Vce Saturation(VCE(sat)) | - |
| Output Voltage(VO(on)) | 300mV@10mA,500uA |
| Input Resistor | 47kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V@2mA,300mV;2.5V@20mA,300mV |
| Voltage - Input(Max)(VI(off)) | 300mV@100uA,5V;500mV@100uA,5V |
| Current - Collector(Ic) | 100mA |
68 150mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS