ROHM · Transistors (BJTs) · MPN EMD2T2R
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| Transition frequency(fT) | 250MHz |
|---|---|
| DC Current Gain | 56 |
| Output Voltage(VO(on)) | 300mV@10mA,500uA |
| type | NPN+PNP |
| Input Resistor | 28.6kΩ |
| Resistor Ratio | 1.2 |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V@5mA,200mV |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
56 1 NPN, 1 PNP Pre-Biased 150mW 100mA 50V SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS