ROHM · Transistors (BJTs) · MPN EMD22T2R
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| Transition frequency(fT) | 250MHz |
|---|---|
| DC Current Gain | 80 |
| type | NPN+PNP |
| Output Voltage(VO(on)) | 100mV |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 10 |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563