ROHM EMD12T2R

ROHM · Transistors (BJTs) · MPN EMD12T2R

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Specifications

Transition frequency(fT)250MHz
DC Current Gain68
typeNPN+PNP
Output Voltage(VO(on))300mV
Input Resistor47kΩ
Resistor Ratio1
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563(SOT-666)

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