ROHM EMB10FHAT2R

ROHM · Transistors (BJTs) · MPN EMB10FHAT2R

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
Output Voltage(VO(on))300mV@5mA,250uA
typePNP
Input Resistor2.86kΩ
Resistor Ratio26
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation150mW
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,300mV
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

80 2 PNP Pre-Biased Transistors 150mW 100mA SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS

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