ROHM DTD143ECT216

ROHM · Transistors (BJTs) · MPN DTD143ECT216

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain47
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV@50mA,2.5mA
Input Resistor4.7kΩ
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V@20mA,300mV
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

50V 47 500mA NPN 1 NPN (Pre-Biased) 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS

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