ROHM DTD123YCT116

ROHM · Transistors (BJTs) · MPN DTD123YCT116

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain56
Current - Collector(Ic)500mA
Input Resistor2.2kΩ
typeNPN
Resistor Ratio4.5
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2V@20mA,300mV

Technical details

50V 56 500mA NPN 1 NPN (Pre-Biased) 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS

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