ROHM · Transistors (BJTs) · MPN DTD123ECHZGT116
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| Transition frequency(fT) | 200MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 39 |
| Operating Temperature | - |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | 300mV@50mA,2.5mA |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 1.2 |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV |
50V 39 500mA 200mW NPN 1 NPN (Pre-Biased) TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS