ROHM · Transistors (BJTs) · MPN DTD114ECHZGT116
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| Transition frequency(fT) | 200MHz |
|---|---|
| Collector - Emitter Voltage VCEO | - |
| DC Current Gain | 56 |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | 300mV@50mA,2.5mA |
| Input Resistor | 13kΩ |
| type | NPN |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,300mV |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
56 500mA NPN 1 NPN (Pre-Biased) 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS