ROHM DTD113EKT146

ROHM · Transistors (BJTs) · MPN DTD113EKT146

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain33
Vce Saturation(VCE(sat))300mV
Operating Temperature-25℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))100mV
Input Resistor1kΩ
Resistor Ratio1
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V@20mA,300mV
Voltage - Input(Max)(VI(off))3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 200mW Surface Mount TO-236-3(SOT-23-3)

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